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Recent Progress in Crystal Growth and Conductivity Control of Wide Bandgap Group III Nitride Semiconductors

Published online by Cambridge University Press:  10 February 2011

I. Akasaki
I. Akasaki*
Affiliation:
Department of Electrical and Electronic Engineering, Meijo University, 1-501 Shiogama-guchi, Tempaku-ku, Nagoya 468-8502, Japan
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Abstract

Recent progress in crystal growth of wide bandgap group III nitrides on highly-mismatched substrates has enabled us to produce high-quality GaN, A1GaN, GaInN and quantum well structures. High-performance blue and green light-emitting diodes and room temperature operation of nitride-based laser diodes have also been realized. Today, steady progress is being made in the areas of crystal growth and device performance. However, much further advances are required in many areas of materials science and device fabrication of the nitrides

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 145
Copyright
Copyright © Materials Research Society 1998

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