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Recent Advances in Si And Ge Zone-MeltingRecrystallization

Published online by Cambridge University Press:  25 February 2011

C. K. Chen ,
M. W. Gels ,
H. K. Choi ,
B-Y. Tsaur  and
John C. C. Fan
C. K. Chen
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
M. W. Gels
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
H. K. Choi
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
B-Y. Tsaur
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
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Abstract

By improving the thermal uniformity and stability of ourgraphite-strip-heater oven, we have been able to significantly improve theoverall quality of ZMR Si films. We have observed unbranched subboundariesand new types of defects that are less extended than the usualsub-boundaries. The overall wafer flatness has been improved so that totalwarp is less than 4 μm for 3-inch wafers. We have also utilized the ZMRtechnique for producing thin Ge-on-insulator films.

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References

REFERENCES

1. Laseur and Electron Beam Processing of Materials, edited by White, C. W., and Peercy, P. S. (Academic Press, New York, 1980).Google Scholar
2. Laser and Electron Beam-Solid Interactions and Material Processing, edited by Gibbons, J. F., Hess, L. D., and Sigmon, T. W., Materials Research Society Symposia, vol. 1 (North Holland, New York, 1981).Google Scholar
3. Laser and Electron Beam Interactions with Solids, edited by Appleton, B. R., and Celler, G. K., Materials Research Society Symposia, vol. 4 (North Holland, New York, 1982).Google Scholar
4. Laser-Solid Interactions and Transient Thermal Processing of Materials, edited by Narayan, J., Brown, W. L., and Lemons, R. A., Materials Research Scoiety Symposia Proceedings, vol. 13 (North Holland, New York, 1983).Google Scholar
5. See J. Cryst. Growth 63(3), (1983), an issue devoted to SOI technology.Google Scholar
6. Fan, J. C. C., Geis, M. W., Tsaur, B-Y., IEDM Technical Digest (Washington, DC, 1980), p. 845; Geis, M. W., Smith, H. I., Antoniadis, D. A., Silversmith, D. J., Fan, J. C. C., and Tsaur, B-Y., ; and Maby, E. W., Geis, M. W., LeCoz, Y. L., Silversmith, D. J., Mountain, R. W., and Antoniadis, D. A., Electron Dev. Lett. EDL-2, 241 (1981).Google Scholar
7. Geis, M. W., Smith, H. I., Tsaur, B-Y., Fan, J. C. C., Silversmith, D. J., and Mountain, R. W., J. Electrochem. Soc. 129, 2812 (1982).Google Scholar
8. Fan, J. C. C., Tsaur, B-Y., Chapman, R. L., and Geis, M. W., Appl. Phys. Lett. 41, 186 (1982), and references therein.Google Scholar
9. Tsaur, B-Y., Geis, M. W., Fan, J. C. C., Silversmith, D. J., and Mountain, R. W., Appl. Phys. Lett. 39, 909 (1981).Google Scholar
10. Tsaur, B-Y., Fan, J. C. C., Chapman, R.-E., Geis, M. W., Silversmith, D. J., and Mountain, R. W., IEEE Electron Dev. Lett. EDL–3, 398 (1982).Google Scholar
11. Geis, M. W., Chen, C. K., Smith, H. I., Mountain, R. W., and Doherty, C. L., paper A7.2, Materials Research Society, 1984 Fall Meeting, Boston, MA.Google Scholar
12. Geis, M. W., Smith, H. I., Silversmith, D. J., and Mountain, R. W., J. Electrochem. Soc. 130 1178 (1983).Google Scholar
13. For results of similar approaches, see Takai, M., Tanigawa, T., Gamo, K., and Namba, S., Japn. J. Appl. Phys. 22, L624 (1983) and Nishioka, T., Shinoda, Y., and Ohmachi, Y., J. Appl. Phy-s. 56, 336 (1984).Google Scholar