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Realization and Characterization of Optically-Pumped GaInN-DFB Lasers

Published online by Cambridge University Press:  10 February 2011

R. Hofmann ,
V. Wagner ,
H-P. Gauggel ,
F. Adler ,
P. Ernst ,
A. Sohmer ,
H. Bolay ,
F. Scholz  and
H. Schweizer
R. Hofmann
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
V. Wagner
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
H-P. Gauggel
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
F. Adler
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
P. Ernst
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
A. Sohmer
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
H. Bolay
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
F. Scholz
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
H. Schweizer
Affiliation:
4. Physik. Institut, Universitat Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart, Germany
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Abstract

We demonstrate room temperature laser activity of optically pumped GaN/GalnN-DFB-lasers. The ridge-waveguide DFB lasers were realized on GaN/GalnN double heterostructures grown by low-pressure metal-organic vapor phase epitaxy. The best laser threshold we achieved is 1.9 MW/cm2.

By varying the grating period, the laser emission wavelength could be tuned from 399 to 415 nm. This allows to determine the dispersion relation of the effective refractive index n eff(λ) and the spectral dependence of the pump power density at the laser threshold P th(λ) over the whole emission range. Furthermore, the shift of the emission wavelength with temperature of the DFB-lasers is investigated and is found to be small compared to the emission wavelength shift of the gain maximum.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1197
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

[1] Nakamura, S., Mukai, T. and Senoh, M.. Appl. Phys. Lett. 64, 1687 (1995).Google Scholar
[2] Nakamura, S., Senoh, M., Iwasa, N. and Nagahama, S.. Appl. Phys. Lett. 67, 1868 (1995).Google Scholar
[3] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsuchita, T., Kiyoku, H. and Sugimoto, Y.. Jap. Journ. Appl. Phys. 35, L217 (1996).Google Scholar
[4] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsuchita, T., Kiyoku, H. and Sugimoto, Y.. Appl. Phys. Lett. 68, 3269 (1996).Google Scholar
[5] Amano, H. and Asahi, T. Akasaki, I.. Jap. Journ. Appl. Phys. 29 (1990).Google Scholar
[6] sif Khan, M., Olson, D. T., Van Hove, L. M. and Kuznia, J. N.. Appl. Phys. Lett. 58, 1515 (1991).Google Scholar
[7] Asif Khan, M., Krishnankutty, S., Skogman, R. A., Olson, D. T. and George, T.. Appl. Phys. Lett. 65, 520 (1994).Google Scholar
[8] Amano, H., Tanaka, T., Kunii, Y., Kim, S. T. and Akasaki, I.. Appl. Phys. Lett. 64, 1377 (1994).Google Scholar
[9] Aggarwal, R. L., Maki, P. A., Molnar, R. J., Liau, Z.-L. and Melngailis, I.. Appl. Phys. Lett. 79, 2148 (1996).Google Scholar
[10] Kim, S. T., Amano, H., Akasaki, I. and Koide, N.. Appl. Phys. Lett. 64, 1535 (1994).Google Scholar
[11] Schmidt, T. J., Yang, X. H., Shan, W., Song, J. J., Salvador, A., Kim, W., Aktas, O., Botchkarev, A. and Morkoç, H.. Appl. Phys. Lett. 68, 1820 (1996).Google Scholar
[12] Redwing, J. M., Loeber, D. A. S., Anderson, N. G., Tischler, M. A. and Flynn, J. S.. Appl. Phys. Lett. 69, 1 (1996).Google Scholar
[13] Hofmann, R., Gauggel, H.-P., Griesinger, U. A., Gräbeldinger, H., Adler, F., Ernst, P., Bolay, H., Harle, V., Scholz, F., Schweizer, H. and Pilkuhn, M. H.. Appl. Phys. Lett. 69, 2068 (1996).Google Scholar
[14] Härle, V., Bolay, H., Steuber, F., Scholz, F., Syganow, V., Frankowsky, G. and Hangleiter, A.. In: Proc. Int. Symp. on Blue Lasers and Light Emitting Diodes, Chiba, Japan page 62. 1996.Google Scholar
[15] Mohammad, S. N., Salvador, A. A. and Morkoç, H.. Proceeding of the IEEE 83, 1306 (1995).Google Scholar
[16] Ejder, E.. Phys. stat. sol. (a) 6, 445 (1971).Google Scholar
[17] Kaden, C., Griesinger, U. A., Schweizer, H., Geng, C., Moser, M. and Scholz, F.. Appl. Phys. Lett. 63, 3414 (1993).Google Scholar
[18] Gauggel, H.-P., Geng, C., Schweizer, H., Barth, F., Hommel, J., Winterhoff, R. and Scholz, F.. Electron. Lett. 31, 367 (1995).Google Scholar
[19] Teisseyre, H., Perlin, P., Suski, T., Grzegory, I., Porowski, S., Jun, J., Pietraszko, A. and Moustakas, T. D.. J. Appl. Phys. 76, 2429 (1994).Google Scholar