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Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

Published online by Cambridge University Press:  31 January 2011

Charlotte Platzer-Björkman ,
Trygve Mongstad ,
Smagul Zh. Karazhanov ,
Jan-Petter Maehlen ,
Erik Stensrud Marstein  and
Arve Holt
Charlotte Platzer-Björkman
Affiliation:
charlotte.platzer@angstrom.uu.se, Uppsala University, Solid State Electronics, Box 534, Uppsala, SE-75121, Sweden
Trygve Mongstad
Affiliation:
trygve.mongstad@ife.no, Institute for Energy Technology, Sol, Kjeller, Norway
Smagul Zh. Karazhanov
Affiliation:
smagul.karazhanov@ife.no, Institute for Energy Technology, Sol, Kjeller, Norway
Jan-Petter Maehlen
Affiliation:
jan.petter.maehlen@ife.no, Institute for Energy Technology, Sol, Kjeller, Norway
Erik Stensrud Marstein
Affiliation:
erik.stensrud.marstein@ife.no, Institute for Energy Technology, Sol, Kjeller, Norway
Arve Holt
Affiliation:
arve.holt@ife.no, Institute for Energy Technology, Sol, Kjeller, Norway
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Abstract

Deposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

Keywords

photovoltaicMgsputtering

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1210: Symposium Q – Photovoltaic Materials and Manufacturing Issues II , 2009 , 1210-Q03-15
Copyright
Copyright © Materials Research Society 2010

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