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Rapid Thermal-Pulsed Diffusion of Zn into GaAs

Published online by Cambridge University Press:  25 February 2011

S.K. Tiku ,
J.B. Delaney ,
N.S. Gabriel  and
H.T. Yuan
S.K. Tiku
Affiliation:
Texas Instruments Inc., P.O. Box 225936, M/S 134, Dallas, TX 75265
J.B. Delaney
Affiliation:
Texas Instruments Inc., P.O. Box 225936, M/S 134, Dallas, TX 75265
N.S. Gabriel
Affiliation:
Texas Instruments Inc., P.O. Box 225936, M/S 134, Dallas, TX 75265
H.T. Yuan
Affiliation:
Texas Instruments Inc., P.O. Box 225936, M/S 134, Dallas, TX 75265
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Abstract

A rapid thermal process for the diffusion of Zn into GaAs has been developedto fulfill the need for highly doped p type layers in GaAs technology. Theprocess uses a solid Zn:Si:O source layer and a quartz-halogen lamp systemfor the thermal drive-in. Surface concentrations of the order of 1020/cm3 have been achieved with good depthreproducibility and low lateral diffusion. Specific contact resistance ofAu:Zn/Au alloyed contacts fabricated using this process was in the 10−7 ohm-cm2 range.

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References

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