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Rapid Thermal Processing and Properties of Sol-Gel Derived Ferroelectric Thin-Films for Non-Volatile Memories.

Published online by Cambridge University Press:  28 February 2011

C. K. Barlingay  and
S. K Dey
C. K. Barlingay
Affiliation:
Advanced Ceramics Processing Laboratory Chemical, Bio & Materials Engineering and The Centers for Solid State Science/Electronics, Arizona State University, Tempe, Arizona 85287–6006
S. K Dey
Affiliation:
Advanced Ceramics Processing Laboratory Chemical, Bio & Materials Engineering and The Centers for Solid State Science/Electronics, Arizona State University, Tempe, Arizona 85287–6006
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Abstract

Ferroelectric Pb(Zr0.52Ti0.48)O3 or PZT (52/48) thin-films (0.5 μm) were integrated onto Pt passivated Si wafers (3–4 inches) by polymeric solgel processing followed by rapid thermal annealing. Dense and crack-free perovskite microstructures were obtained by densification of the amorphous gel-matrix prior to crystallization. The films exhibited submicron grains (0.2–0.6 μm) with a columnar growth habit. High field measurements on thin-films determined Pr, Psp, and Ec in the ranges of 29–32 μC/cm2. 44–58 μC/cm2, and 50–60 kV/cm, respectively, and ferroelectric switching times below 3 ns.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 311
Copyright
Copyright © Materials Research Society 1991

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