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Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

H. J. Stein
H. J. Stein*
Affiliation:
Sandia National Laboratories Albuquerque, New Mexico 87185
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Abstract

Infrared absorption by localized vibrational modes has been used to investigate rapid thermal annealing (RTA) of oxygen-vacancy (O-V) defects in O-implanted Si. At least three processes are involved in the annealing of O-V defects. An activation energy of 1.0 ± 0.2 eV for a process leading to O-V formation is attributed to O-V diffusion. The final O-V annealing stage is attributed to oxygen clustering around O2-V centers. Processes observed here in RTA are expected to be operative during implantation at the temperatures (400 to 600°C) used for production of silicon-on-insulator structures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 341
Copyright
Copyright © Materials Research Society 1987

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References

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