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Rapid Crystallization of Amorphous Silicon Utilizing the Plasma Annealing at Atmospheric Pressure

Published online by Cambridge University Press:  01 February 2011

Hajime Shirai ,
Yusuke Sakurai ,
Mina Ye ,
Koji Haruta ,
Tomohiro Kobayashi  and
Yu-ichiro Takemura
Hajime Shirai
Affiliation:
shirai@fms.saitama-u.ac.jp, Saitama University, The Graduate School of Science and Engineering, 255 Shimo-Okubo,Sakura-ku, Saitama, 338-8570, Japan, +81-48-858-3676, +81-48-858-3676
Yusuke Sakurai
Affiliation:
shirai@fms.saitama-u.ac.jp, Saitama University, The Graduate School of Science and Engineering, 255 Shimo-Okubo, Sakura-ku, Saitama, 338-8570, Japan
Mina Ye
Affiliation:
shirai@fms.saitama-u.ac.jp, Saitama University, The Graduate School of Science and Engineering, 255 Shimo-Okubo, Sakura-ku, Saitama, 338-8570, Japan
Koji Haruta
Affiliation:
shirai@fms.saitama-u.ac.jp, Saitama University, The Graduate School of Science and Engineering, 255 Shimo-Okubo, Sakura-ku, Saitama, 338-8570, Japan
Tomohiro Kobayashi
Affiliation:
shirai@fms.saitama-u.ac.jp, The Institute of Physics and Chemical Research, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
Yu-ichiro Takemura
Affiliation:
shirai@fms.saitama-u.ac.jp, Japan Science and Technology Agency, 2-1-6 Sen-gendai, Tsukuba, 305-0047, Japan
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Abstract

The rapid crystallization of amorphous silicon utilizing the rf inductive coupling thermal plasma jet of argon is demonstrated. Highly crystallized a-Si films were fabricated on th-SiO2 and textured a-Si:H:B/SnO2/glass by adjusting the translational velocity of the substrate stage. The H concentration in the films decreased from 1021 cm-3 to 1019 cm-3 with no marked increases in oxygen and nitrogen impurity concentrations and defect density. The crystallization proceeds from the bottom to front surface in terms of the volume expansion during the solidification and crystallization of liquid Si.

Keywords

crystal growthSiplasma deposition

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References

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