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Raman Studies of Hydrogen Passivation in Silicon

Published online by Cambridge University Press:  26 February 2011

M. Stutzmann  and
C. P. Herrero
M. Stutzmann
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, D-7000 Stuttgart 80, Federal Republic of Germany
C. P. Herrero
Affiliation:
Max-Planck-Institut für Festkörperforschung, Heisenbergstraβe 1, D-7000 Stuttgart 80, Federal Republic of Germany
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Abstract

We have studied the hydrogen passivation of boron acceptors in bulk crystalline silicon with Raman scattering. Upon hydro-genation, distinct changes in the optical phonon lineshape and the localized vibrational modes of boron are observed. The hy-drogen in the passivated region gives rise to a specific Raman-active mode, whose vibrational frequency depends strongly on temperature and uniaxial stress. Implications of these results on possible structural models are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 271
Copyright
Copyright © Materials Research Society 1988

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References

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