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Raman and Photoluminescence Mapping of Lattice Matched InGaP/GaAs Heterostructures

Published online by Cambridge University Press:  21 March 2011

G. Attolini ,
P. Fallini ,
F. Germini ,
C. Pelosi ,
O. Martínez ,
L. F. Sanz ,
M. A. González  and
J. Jiménez
G. Attolini
Affiliation:
MASPEC-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
P. Fallini
Affiliation:
MASPEC-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
F. Germini
Affiliation:
MASPEC-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
C. Pelosi
Affiliation:
MASPEC-CNR Institute, Parco Area Delle Scienze, 37/A Fontanini, 43010 Parma, Italy
O. Martínez
Affiliation:
Física de la Materia Condensada, ETSII, 47011Valladolid, Spain
L. F. Sanz
Affiliation:
Física de la Materia Condensada, ETSII, 47011Valladolid, Spain
M. A. González
Affiliation:
Física de la Materia Condensada, ETSII, 47011Valladolid, Spain
J. Jiménez
Affiliation:
Física de la Materia Condensada, ETSII, 47011Valladolid, Spain
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Abstract

The influence of the substrate on composition and CuPt-type spontaneous order of MOVPE lattice matched InGaP/GaAs layers was studied. The study was carried out by microRaman and microphotoluminescence. The order was determined by the band gap, while the Raman parameters were also contributed by the surface topography that was also related to the type of substrate. The spontaneous order increases with Si- doping of the substrates. Doping the layers with Zn randomises the alloy.

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