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Radiation Resistance of Amorphous Silicon Alloy Photovoltaic Cells

Published online by Cambridge University Press:  26 February 2011

James R. Woodyard  and
J. J. Hanak
James R. Woodyard
Affiliation:
Institute for Manufacturing Research and Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI 48202
J. J. Hanak
Affiliation:
Sovonics Solar Systems, 1100 West Maple Road, Troy, MI 48084
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Abstract

The results of investigations of high energy proton radiation resistance of a-Si alloy thin film photovoltaic cells are reported. Irradiations were carried out with 200 keV and 1.00 MeV protons with fluences ranging between IEII and IEl5 cm-2. Defect generation and passivation mechanisms were studied using the AM1 conversion efficiency and isochronal anneals. It is concluded that the primary defect generation mechanism results from the knock-on of Si and Ge in the intrinsic layer of the cells. The defect passivation proceeds by the complex annealing of Si and Ge defects and not by the simple migration of hydrogen.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 533
Copyright
Copyright © Materials Research Society 1987

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