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Quenching and Recovery of the Photoluminescence in Porous Si After Pulse IR Irradiation

Published online by Cambridge University Press:  28 February 2011

J. Diener ,
S. Ganichev ,
M. Ben-Chorin ,
D. Kovalev ,
V. Petrova-Koch  and
F. Koch
J. Diener
Affiliation:
Technische Universität München,Physik-Department E16, D-85747 Garching, Germany
S. Ganichev
Affiliation:
A.F. Ioffe Physicotechnical Institute, Russian Academy of the Sciences, St. Petersburg, 194021, Russia
M. Ben-Chorin
Affiliation:
Technische Universität München,Physik-Department E16, D-85747 Garching, Germany
D. Kovalev
Affiliation:
A.F. Ioffe Physicotechnical Institute, Russian Academy of the Sciences, St. Petersburg, 194021, Russia
V. Petrova-Koch
Affiliation:
Technische Universität München,Physik-Department E16, D-85747 Garching, Germany
F. Koch
Affiliation:
Technische Universität München,Physik-Department E16, D-85747 Garching, Germany
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Abstract

A pulsed, high-power TEA CO2 laser with lines in the region from 9.2 to 10.6 μm has been used to irradiate luminescent porous Si samples. The visible luminescence quenches and then recovers to its initial value on a time scale of one hour. It is found that the quenching is efficient when the IR wavelength is within the Si-O absorption band. We suggest that the resonant excitation of the Si-O bonds results in a metastable reconfiguration of the oxygen together with the creation of dangling bonds. These non-radiative centers are responsible for the PL quenching.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 501
Copyright
Copyright © Materials Research Society 1995

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References

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