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Quasi-Thermodynamic Analysis of Metalorganic Vapor Phase Epitaxy of GaN

Published online by Cambridge University Press:  10 February 2011

Shukun Duan  and
Dacheng Lu
Shukun Duan
Affiliation:
National Integrated Optoelectronics Laboratory, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, CHINA, skduan@red.semi.ac.cn
Dacheng Lu
Affiliation:
Laboratory of Semiconductor Materials of Sciences, Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, CHINA, dclu@red.semi.ac.cn
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Abstract

A thermodynamic analysis of GaN grown by MOVPE has been proposed based on quasi-thermodynamic equilibrium established on the solid-vapor interface. Phase diagrams for the MOVPE growth of GaN using TEGa and NH3 has been calculated. The phase diagram is consists of four phases regions: the region for single condensed phase of GaN, the region for double condensed phase of GaN (s) +Ga(l), the etching region with Ga droplets and the etching region without Ga droplets. The effect of growth temperature, reactor pressure, content of carrier gas, deposition ratio of NH3 and V/III ratio upon growth of GaN using MOVPE has been studied.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 81
Copyright
Copyright © Materials Research Society 1997

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References

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