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Quasi-Stoichiometric Silicon Nitride Thin Films Deposited by Remote Plasma-Enhanced Chemical-Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

G. Lucovsky ,
Y. Ma ,
S. S. He ,
T. Yasuda ,
D. J. Stephens  and
S. Habermehl
G. Lucovsky
Affiliation:
Departments of Physics, and Material Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202, USA
Y. Ma
Affiliation:
Departments of Physics, and Material Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202, USA
S. S. He
Affiliation:
Departments of Physics, and Material Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202, USA
T. Yasuda
Affiliation:
Departments of Physics, and Material Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202, USA
D. J. Stephens
Affiliation:
Departments of Physics, and Material Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202, USA
S. Habermehl
Affiliation:
Departments of Physics, and Material Science and Engineering North Carolina State University, Raleigh, NC, 27695–8202, USA
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Abstract

Conditions for depositing quasi-stoichiometric silicon nitride films by low-temperature, remote plasma-enhanced chemical-vapor deposition, RPECVD, have been identified using on-line Auger electron spectroscopy, AES, and off-line optical and infrared, IR, spectroscopies. Quasi-stoichiometric films, by the definition propose in this paper, do not display spectroscopic evidence for Si-Si bonds, but contain bonded-H in Si-H and Si-NH arrangements. Incorporation of RPECVD nitrides into transistor devices has demonstrated that electrical performance is optimized when the films are quasi-stoichiometric with relatively low Si-NH concentrations.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 33
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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