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Pulsed Laser-Induced Amorphization of Silicon Films

Published online by Cambridge University Press:  28 February 2011

T. Sameshima  and
S. Usui
T. Sameshima
Affiliation:
Sony Research Center, 174 Fujjitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
S. Usui
Affiliation:
Sony Research Center, 174 Fujjitsuka-cho, Hodogaya-ku, Yokohama 240, Japan
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Abstract

Amorphization of silicon films occurred through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30ns-XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030m−3s−1. Silicon films were completely amorphized for films thinner than 18nm. Complete amorphizatoin is brought about by reduced grain size and reduced recalescence as the film thickness decreases. Recalescence was observed in situusing transient thermometry with a platinum-temperature-sensing layer when a 15nm-thick silicon film was amorphized.

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References

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