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Pulsed Laser Deposition of High Quality ZnO Thin Films

Published online by Cambridge University Press:  01 January 1992

S. Amirhaghi ,
V. Craciun ,
F. Beech ,
M. Vickers ,
S. Tarling ,
P. Barnes  and
I. W. Boyd
S. Amirhaghi
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
V. Craciun
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
F. Beech
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
M. Vickers
Affiliation:
Departmentof Crystallography, Birkbeck College, London WC1E 7HX, UK
S. Tarling
Affiliation:
Departmentof Crystallography, Birkbeck College, London WC1E 7HX, UK
P. Barnes
Affiliation:
Departmentof Crystallography, Birkbeck College, London WC1E 7HX, UK
I. W. Boyd
Affiliation:
Electronic & Electrical Engineering, University College London, London WC1E 7WE, UK
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Abstract

Thin films of ZnO have been grown on silicon and glass substrates by the pulsed laser deposition method. The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of the films have been studied. The KrF excimer laser (at 248 nm) was found to produce better quality thin films than the frequency doubled Nd:YAG laser (532 nm). Layers produced at substrate temperatures as low as 300°C were c-axis oriented with a FWHM value for the 002 XRD reflection less than 0.2° and exhibited optical transmission higher than 80% in the visible region.

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References

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