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Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphousand Single Crystal Silicon

Published online by Cambridge University Press:  25 February 2011

J. O. Olowolafe  and
R. Fastow
J. O. Olowolafe*
Affiliation:
Department of Materials Science, Cornell University Ithaca, New York 14853
R. Fastow
Affiliation:
Department of Materials Science, Cornell University Ithaca, New York 14853
*
*Department of Physics, University of lie, Ile-Ife,Nigeria
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Abstract

Thin layers (~1,000 A ) of Ni and Co have been reacted with both (100) andamorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzedusing Rutherford backscattering, x-ray diffraction, and transmissionelectron microscopy. Rutherford backscattering showed that the metal/a-Siand metal/(100)-Si reaction rates were comparable. Both reactions began atthe composition of the lowest eutectic. For comparison. furnace annealing ofthe same structures showed that the reaction rate of Ni with amorphoussilicon was greater than with (100) Si; Co reacted nearly identically withboth substrates. Diffraction data suggest that pulsed ion beam annealingcrystallizes the amorphous silicon before the metal/a-Si reactionbegins.

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References

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