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Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon

Published online by Cambridge University Press:  10 February 2011

A. Giese ,
H. Bracht ,
J. T. Walton  and
N. A. Stolwijk
A. Giese
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, axel.giese@uni-muenster.de
H. Bracht
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. University of California at Berkeley, Berkeley, CA 94720, U.S.A.
J. T. Walton
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
N. A. Stolwijk
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, axel.giese@uni-muenster.de
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Abstract

We present out-diffusion of Zn in Si as a new method to study properties of Si vacancies. Out-diffusion experiments were performed on homogeneously Zn-doped Si samples at 1107°C and 1154°C. The resulting concentration-depth profiles were measured by means of spreading-resistance profiling. Based on a diffusion model in which Zn migrates simultaneously via the kick-out and the dissociative mechanism all experimental profiles were modeled by computer simulations. The calculations reveal that out-diffusion of Zn from Si occurs to a considerable extent via the dissociative mechanism. Hence, vacancy properties like the equilibrium concentration C V eq and the transport capacity C v eq D V can be extracted from profile fittings. The results are compared with literature data deduced from in-diffusion experiments.

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References

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