Hostname: page-component-54dcc4c588-dbm8p Total loading time: 0 Render date: 2025-10-11T23:53:54.873Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties of Intrinsic a-Si Films Deposited From Higher Order Silanes by Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

Richard E. Rocheleau ,
Steven S. Hegedus  and
Bill N. Baron
Richard E. Rocheleau
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
Steven S. Hegedus
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
Bill N. Baron
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716
Get access

Abstract

Amorphous silicon films have been deposited by chemical vapor deposition using disilane at temperatures between 360 and 525°C at growth rates up to 50 A/s. Intrinsic films have the following properties: σp less than 5 × 10−6 (Ω-cm)−l; σd less than 5 × 10−11 (Ω-cm)−1 with Ea = 0.7 to 0.8 eV; diffusion length around 0.1 μm; Urbach energy 48 to 55 meV; and mid-gap density of states greater than 5 × 1016 cm−3 eV−1. Boron compensation improved collection efficiency by lowering the mid-gap density of states, not by improving the μτ product. Pin cells with effíciencies of 4% and Jsc = 10.9 mA/cm2 (87.5 mW ELH) were fabricated.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1.Final Report, SERI Subcontract No. XB-3-03089-1.Google Scholar
2. Bogaert, R. J., PhD Dissertation, University of Delaware, 1985.Google Scholar
3. , Wronski et al., Solar Cells 2 (1980) 245.Google Scholar
4. Hegedus, S., J. Non-Crystalline Solids, 66 (1984) 369.Google Scholar
5. Jackson, W. et al., Phys. Rev. B, 27 (1983) 4861.Google Scholar
6. Boer, W. den, J. Physique C4.(1981) 451.Google Scholar
7. Cohen, J. D. et al., Phys. Rev. B, 25 (1982) 5321.CrossRefGoogle Scholar