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Properties of Gallium Disorder and Gold Implants inGaN

Published online by Cambridge University Press:  17 March 2011

W. Jiang ,
W.J. Weber ,
S. Thevuthasan  and
V. Shutthanandan
W. Jiang
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
W.J. Weber
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
S. Thevuthasan
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
V. Shutthanandan
Affiliation:
Pacific Northwest National Laboratory, P.O. Box 999, Richland, WA 99352, U.S.A.
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Abstract

Epitaxial single-crystal GaN films on sapphire were implanted 60° off the<0001> surface normal with 1 MeV Au2+ or 3 MeV Au3+ over a fluence range from 0.88 to 86.2 ions/nm2 at 180 and 300 K. The implantation damage was studiedin-situ using 2 MeV He+ Rutherford backscattering spectrometry inchanneling geometry (RBS/C). The disordering rate in the near- surfaceregion is faster than at the damage peak. In all cases, results show anintermediate stage of Ga disorder saturation at the damage peak. During thethermal annealing at 870 K for 20 min, some Au implants in GaN diffuse intothe amorphized surface region, while the remaining Au atoms distributearound the mean ion-projected-range. These results suggest a high mobilityof both Ga defects and Au implants in GaN. Deeper damage implantation by 3MeV Au3+ indicates that GaN cannot be completely amorphized up tothe highest ion fluence (86.2 ions/nm2) applied at 300 K.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.9
Copyright
Copyright © Materials Research Society 2001

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