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Properties of CVD Diamond/Metal Interface

Published online by Cambridge University Press:  26 February 2011

Yusuke Mori ,
Hiroshi Kawarada  and
Akio Hiraki
Yusuke Mori
Affiliation:
Department of Electrical Eng., Faculty of Eng., Osaka University 2-1 Yamadaoka Suita, Osaka 565, Japan
Hiroshi Kawarada
Affiliation:
Department of Electrical Eng., Faculty of Eng., Osaka University 2-1 Yamadaoka Suita, Osaka 565, Japan
Akio Hiraki
Affiliation:
Department of Electrical Eng., Faculty of Eng., Osaka University 2-1 Yamadaoka Suita, Osaka 565, Japan
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Abstract

Electric properties of the interface between metal and semiconducting CVD diamond formed by microwave plasma chemical vapour deposition (CVD) have been investigated. Much better rectifying property due to Schottky barrier has been obtained in the films formed with CO(5%)/H2 compared with CH4(0.5%)/H2. A high breakdown voltage (200 V) and a high rectification ratio (105) have been observed at the evaporated Al/diamond interfaces formed with CO(5%)/H2. In the point contact interfaces, where the metal-carbon reaction is not expected at room temperature, the rectifying and ohmic property depends on the electronegativity of metals.

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References

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