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Properties of A—Sin:H Films Prepared by Glow Discharge of Si2H6—Nh3 Gas Mixture

Published online by Cambridge University Press:  28 February 2011

Y. Kojima ,
S. Narikawa ,
T. Matsuyama ,
E. Imada ,
H. Nojima ,
T. Hayakawa  and
S. Ehara
Y. Kojima
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
S. Narikawa
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
T. Matsuyama
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
E. Imada
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
H. Nojima
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
T. Hayakawa
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
S. Ehara
Affiliation:
Central Research Laboratories, Sharp Corporation, Tenri—shi, Nara, 632, JAPAN
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Abstract

The electrical and optical properties of a—SiNx:H films prepared by the glow discharge of Si2H6-NH3 gas mixture have been investigated in a wide range of the molar ratio of NH3 to Si2H6 The maxima of the dark—and the photo—conductivity are observed at the molar ratio of about 10-1. At this molar ratio the deposition rate is about33 Å/sec. The optical gap and the compositional ratio of nitrogen to silicon change smoothly from those of a—Si:H to those of a—Si3N4. It is found that the valency control is possible in a—SiNx:H films prepared at a high deposition rate.

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References

(1) Noguchi, T., Usui, S., Sawada, A., Kanoh, Y. and Kikuchi, M., Jpn. J. Appl. Phys. 21, L485 (1982).Google Scholar
(2) Kurata, H., Hirose, M. and Osaka, Y., Jpn. J. Appl. Phys. 20, L811 (1981).Google Scholar
(3) Watanabe, H., Katoh, K. and Yasui, M., Thin Solid Films 106, 263 (1983).Google Scholar
(4) Ashida, Y., Mishima, Y., Hirose, M. and Osaka, Y., J. Appl. Phys. 55, 1425 (1984).Google Scholar
(5) Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E. and Czubatyj, W., Phys. Rev. B28, 3234 (1983).Google Scholar
(6) Lucovsky, G., Solid State Ccnrmum. 29, 571 (1979).Google Scholar
(7) Brodsky, M.H., Cardona, M. and Cuomo, J.J., Phys. Rev. B16, 3556 (1977).Google Scholar
(8) Fang, C.J., Gruntz, K.J., Ley, L., Cardona, M., Demond, F.J., Muller, G. and Kalbitzer, S., J. Non-Cryst. Solids 35/36, 255 (1980).Google Scholar
(9) Lanford, W.A. and Rand, M.J., J. Appl. Phys. 49, 2473 (1978).CrossRefGoogle Scholar
(10) Watanabe, H., Katoh, K. and Yasui, M., Jpn. J. Appl. Phys. 21, L341 (1982).CrossRefGoogle Scholar
(11) Shanks, H., Fang, C.J., Ley, L., Cardona, M., Demond, F.J. and Kalbitzer, S., Phys. Stat. Sol. (b) 100, 43 (1980).Google Scholar
(12) Spear, W.E. and Comber, P.G. Le, Solid State Commum. 17, 1193 (1975).Google Scholar
(13) Kurata, H., Miyamoto, H., Hirose, M. and Osaka, Y., Jpn. J. Appl. Phys. 21 Suppl. 21–2 205 (1982).Google Scholar