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Properties of 2D and 3D Dielectric Structures Fabricated by Electrochemical Dissolution of III-V Compounds

Published online by Cambridge University Press:  21 March 2011

I.M. Tiginyanu ,
S. Langa ,
M. Christophersen ,
J. Carstensen ,
V. Sergentu ,
E. Foca ,
O. Rios  and
H. Föll
I.M. Tiginyanu
Affiliation:
Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, Chisinau, Moldova
S. Langa
Affiliation:
Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, Chisinau, Moldova
M. Christophersen
Affiliation:
Department of Engineering, Christian-Albrechts-University, Kiel, Germany
J. Carstensen
Affiliation:
Department of Engineering, Christian-Albrechts-University, Kiel, Germany
V. Sergentu
Affiliation:
Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, Chisinau, Moldova
E. Foca
Affiliation:
Laboratory of Low-Dimensional Semiconductor Structures, Technical University of Moldova, Chisinau, Moldova
O. Rios
Affiliation:
Department of Engineering, Christian-Albrechts-University, Kiel, Germany
H. Föll
Affiliation:
Department of Engineering, Christian-Albrechts-University, Kiel, Germany
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Abstract

Porous layers and membranes representing 2D and 3D dielectric structures were fabricated on different III-V compounds (GaAs, InP, GaP) by electrochemical etching techniques. Nonlithographically fabricated ordered nanopore arrays in InP are reported for the first time. We show that the reflectance from nanostructured InP is lower than that from bulk InP in the spectral interval 1.5–2.2 eV. The artificial anisotropy induced by nanotexturization was studied in porous GaP membranes and the refractive indices for ordinary and extraordinary beams were evaluated.

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