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Properties and Production Mechanism of Low-Temperature Deposited CAT-CVD Poly-Silicon films

Published online by Cambridge University Press:  28 February 2011

Hideki Matsumura ,
Yoichi Hosoda  and
Seijiro Furukawa
Hideki Matsumura
Affiliation:
Japan Advanced Institute of Science and Technology (JAIST) Hokuriku, Tatsunokuchi, Ishikawa-ken 923–12, Japan
Yoichi Hosoda
Affiliation:
Tokyo Institute of Technology, Department of Applied Electronics, Nagatsuda, Midori-ku, Yokohama 227, Japan
Seijiro Furukawa
Affiliation:
Tokyo Institute of Technology, Department of Applied Electronics, Nagatsuda, Midori-ku, Yokohama 227, Japan
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Abstract

Poly-silicon films are obtained at temperatures as low as 400 °C by the catalytic chemical vapor deposition (cat-CVD) method, in which deposition gases are decomposed by the catalytic or pyrolytic reactions with a heated catalyzer near substrates. It is found that there are roughly two modes of deposition conditions such as low gas pressure mode and high gas pressure mode for obtaining poly-silicon films, and also that the Hall mobility of the cat-CVD poly-silicon films of low gas pressure mode sometimes exceeds over 100 cm2/Vs.

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References

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