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Preparation of Boron Nitride Films by Rf ReactiveSputtering

Published online by Cambridge University Press:  21 February 2011

P. K. Banerjee ,
B. Chaterjee ,
J. S. Kim  and
S. S. Mitra
P. K. Banerjee
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
B. Chaterjee
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
J. S. Kim
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
S. S. Mitra
Affiliation:
Thin Film Research Laboratory, Department of Electrical Engineering, University of Rhode Island, Kingston, RI 02881, USA
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Abstract

Boron nitride films were deposited by rf reactive sputtering. Thecomposition of the film was determined by X-ray photo-electronspectroscopy(XPS). Optical properties of boron nitride were studied by IRspectroscopy. Resultant films showed optical characteristics similar tothose of hexagonal boron nitride. The ratio of boron to nitrogen was variedfrom 3.11 to 1.45 by varying the amount of nitrogen. Resulting films haverefractive index in the range of 2.05 – 3.21.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 273
Copyright
Copyright © Materials Research Society 1992

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References

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