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Post-Oxidation Enhanced Diffusion of Low-Energy Implanted Boron in Ultra-Shallow P+/N Junctions Formation

Published online by Cambridge University Press:  17 March 2011

D. Lenoble ,
A. Halimaoui  and
A. Grouillet
D. Lenoble
Affiliation:
France-Telecom R&D - CNET, 28 chemin du vieux chêne - 38243 Meylan -, France
A. Halimaoui
Affiliation:
France-Telecom R&D - CNET, 28 chemin du vieux chêne - 38243 Meylan -, France
A. Grouillet
Affiliation:
France-Telecom R&D - CNET, 28 chemin du vieux chêne - 38243 Meylan -, France
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Abstract

In this paper, we report for the first time the effect of sacrificial oxide (sacox) on the boron diffusion in ultra-shallow P+/N junctions. It is shown that the boron diffusivity is enhanced when low energy implantations are performed through sacrificial oxide. The various experimental data lead to conclude that the Post-Oxidation Enhanced Diffusion (POED) is due to a « mirror effect » seen by the Si interstitials incoming into the sacox layer. POED occurs even for sacox as thin as 1.5 nm. From a simple model, the reflection coefficient is estimated to be about 100 % for a 2.5 nm-thick sacox.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B3.9
Copyright
Copyright © Materials Research Society 2000

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References

[1] International Technology Roadmap for Semiconductors, 1999 Google Scholar
[2] Lenoble, D., Josse, E., Grouillet, A., Julien, C., Skotnicki, T., Walther, S., Liebert, R.B., submitted to ESSDERC 2000, Cork, Ireland, sept. 2000 Google Scholar
[3] Antoniadis, D.A. and Moskowitz, I., J. Appl. Phys., 53 (10), 6788, 1982 10.1063/1.330067Google Scholar
[4] Mathiot, D. and Pfister, J.C, J. Appl. Phys., 55 (10), 3518, 1984 10.1063/1.332941Google Scholar
[5] Cowern, N.E.B., Janssen, K.T.F., Walle, G.F.A. van de, Gravesteijn, D.J., Phys. Rev. Lett. 65 (19), 2434, 1990 10.1103/PhysRevLett.65.2434Google Scholar
[6] Fair, R.B., impurity doping processes in silicon, ed. Wang, F.F.Y., vol.2, 338, 1981 Google Scholar
[7] Simonton, R. and Tash, A.F., Ion Implantation Technology, ed. Ziegler, J.F., 119, 1992 Google Scholar
[8] Coffa, S., Libertino, S., Magna, A. La, Privitera, V., Mannino, G., Priolo, F., Mat. Res. Soc. Proc. vol 532, 93, 1998 10.1557/PROC-532-93Google Scholar