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Post Implantation Treatment of Silicon Carbide-Based Sensors forHydrogen Detection Properties Enhancement

Published online by Cambridge University Press:  17 March 2011

I. C. Muntele ,
C. I. Muntele ,
D. Ila ,
R. L. Zimmerman ,
D. B. Poker  and
D. K. Hensley
I. C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
C. I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
D. Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
R. L. Zimmerman
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL
D. B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
D. K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

Palladium ion implantation was performed at energies of 35 keV, 50 keV and100 keV, at both room temperature (RT) and 500 °C, on two identical sets of6H, n-type silicon carbide samples. Then, one set of samples was subjectedto a post-implantation sputtering process, in order to eliminate thesubstrate layer damaged by the palladium ions during implantation.Electrical and micro-Raman measurements have been performed on both sets ofsamples, aiming for a better understanding of the chemical processes thattake place in the presence of hydrogen atmosphere in the chemical sensorsprepared this way.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.15
Copyright
Copyright © Materials Research Society 2001

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