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A Possibility of ALE Growth of InN by using InCl3

Published online by Cambridge University Press:  16 February 2011

Kazuhito Higuchi ,
Akio Unno  and
Tadashi Shiraishi
Kazuhito Higuchi
Affiliation:
Tokai University, Dept. of Communications, 1117 Kitakaname Hiratsuka 259–12, Japan Fax. 81-463-58-1812
Akio Unno
Affiliation:
Tokai University, Dept. of Communications, 1117 Kitakaname Hiratsuka 259–12, Japan Fax. 81-463-58-1812
Tadashi Shiraishi
Affiliation:
Tokai University, Dept. of Communications, 1117 Kitakaname Hiratsuka 259–12, Japan Fax. 81-463-58-1812
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Abstract

A possibility of the Atomic Layer Epitaxy, ALE, for InN was demonstrated by using InC13/N2 and NH3/N2. The InCl3 is a solid at room temperature and can be supplied in the reactor by heating with N2 carrier gas. When the solid InCl3 is heated in an inert gas, InCl, InCl3 and In2Cl3 gases are formed. It was clear that the In2Cl5 which is the largest molecule of the three results in solid structural defects. The ALE growth temperature was from 440°C to 505°C. The fact that the ALE was performed at the temperature range from 440°C to 505°C indicates that In was supplied as InC13, suggesting the possibility of InN ALE by using InCl3 and NH3.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 169
Copyright
Copyright © Materials Research Society 1991

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References

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