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Porous Silicon from Hydrogenated Amorphous Silicon: Comparison with Crystalline Porous Silicon

Published online by Cambridge University Press:  15 February 2011

J.-N. Chazalviel ,
R. B. Wehrspohn ,
I. Solomon  and
F. Ozanam
J.-N. Chazalviel
Affiliation:
Laboratoire de Physique de la Matière Condensée, CNRS-école Polytechnique, 91128 Palaiseau-Cedex, France
R. B. Wehrspohn
Affiliation:
Laboratoire de Physique de la Matière Condensée, CNRS-école Polytechnique, 91128 Palaiseau-Cedex, France
I. Solomon
Affiliation:
Laboratoire de Physique de la Matière Condensée, CNRS-école Polytechnique, 91128 Palaiseau-Cedex, France
F. Ozanam
Affiliation:
Laboratoire de Physique de la Matière Condensée, CNRS-école Polytechnique, 91128 Palaiseau-Cedex, France
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Abstract

Device-grade, boron-doped amorphous hydrogenated silicon can be made microporous by anodization in ethanoic HF. The thickness of the porous layer is limited by an instability due to the high resistivity of the material. Amorphous porous silicon exhibits strong room-temperature photoluminescence around 1.5 eV even in samples containing a high density of non-radiative recombination centers. This demonstrates the presence of a spatial confinement effect, as opposed to quantum confinement effect for crystalline porous silicon. The temperature dependence of the luminescence intensity is also accounted for on the same grounds.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 403
Copyright
Copyright © Materials Research Society 1997

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