Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-06T19:51:25.518Z Has data issue: false hasContentIssue false
  • English
  • Français

Porous Silicon as a Sacrificial Material for Micromachining of Silicon Optical Platforms

Published online by Cambridge University Press:  10 February 2011

M. Guendouz ,
P. Joubert ,
N. Pedrono  and
J. Le Rouzic
M. Guendouz
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; IUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
P. Joubert
Affiliation:
Groupe de Microélectronique et Visualisation, Université de Rennes 1; IUT de Lannion, Boîte Postale 150; 22302 Lannion Cedex, France
N. Pedrono
Affiliation:
France-Télécom, CNET, 2 Avenue Pierre Marzin, 22307 Lannion Cedex, France
J. Le Rouzic
Affiliation:
France-Télécom, CNET, 2 Avenue Pierre Marzin, 22307 Lannion Cedex, France
Get access

Abstract

Porous silicon obtained by the anodization of heavily doped n+-type silicon wafers was used as a sacrificial layer to micromachine silicon platforms. The effect of experimental parameters, such as the nature of the masking layer, current density and anodization time, on the geometry of the porous Si formed in patterned substrate is shown. Advantages of this method on the orientation-dependent chemical etching (ODCE), which is classically used for optical fiber alignment, are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 373
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Bean, K.E., IEEE Trans. Electron Devices, ED-25, p. 1185 (1978).Google Scholar
2. Seidel, H., Csepregi, L., Heuberger, A. and Baumgartel, H., J. Electrochem. Soc. 137, p. 3612 (1990).Google Scholar
3. Steiner, P. and Lang, W., Thin Solid Films, 255, p. 52 (1995).Google Scholar
4. Bell, T.E., Gennissen, P.T., DeMunter, D. and Kuhl, M., J. Micromech. Microeng. 6, p. 361 (1996).Google Scholar
5. Kriger, M., Arens-Ficher, R., Thonissen, M., Munder, H., Berger, M.G., Luth, H., Hilbrich, S. and Theiss, W., Thin Solid Films, 276, p. 257 (1996).Google Scholar
6. Barla, K., Bomchil, G., Herino, R., Pfister, J.C., and Baruchel, J., J. Cryst.Growth 68, p. 721 (1984).Google Scholar
7. Guendouz, M., Pedrono, N., Charrier, J., Joubert, P., and Rouzic, J. Le, Electron. Lett. 33, p. 1695 (1997).Google Scholar
8. Chuang, S.-F., Collins, S.D., and Smith, R.L., Appl. Phys. Lett. 55, p. 675 (1989).Google Scholar
9. Puers, D. and Sansen, W., Sensors and Actuators, A21–A23, p. 1036 (1990).Google Scholar