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Plasma Enhanced Chemical Vapor Deposition of Silicon Sulfide andPhosphorus Sulfide thin Films

Published online by Cambridge University Press:  21 February 2011

R.K. Shibao ,
V.I. Srdanov ,
M. Hay  and
H. Eckert
R.K. Shibao
Affiliation:
Department of Chemistry, University of California, Santa Barbara, CA 93106
V.I. Srdanov
Affiliation:
Department of Chemistry, University of California, Santa Barbara, CA 93106
M. Hay
Affiliation:
Department of Chemistry, University of California, Santa Barbara, CA 93106
H. Eckert
Affiliation:
Department of Chemistry, University of California, Santa Barbara, CA 93106
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Abstract

Amorphous SiSx:H (x ∼ 2) films have been synthesized from H2S andSiH4 precursors using a remote plasma enhanced chemical vapor depositionapparatus. Structural studies by solid state nuclear magnetic resonance(NMR) and Raman scattering reveal that the atomic environments in thesematerials are similar to those observed in melt-quenched silicon sulfideglasses, and are characterized by corner- and edge-shared SiS4/2tetrahedra. Compared to these glasses, however, the films show consistentlyhigher fractions of corner-sharing S1S4/2 tetrahedra. The ratioof corner- to edge sharing tetrahedra and the Si:S ratio can be influencedby the H2S/S1H4 flow rate ratio during deposition.Thus, PECVD opens up wider opportunities for structural tailoring ofamorphous silicon sulfide materials than currently possible by means of themelt-quenching method. Preliminary data for the PECVD synthesis ofphosphorus sulfide is also presented.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 346: Symposium N – Better Ceramics Through Chemistry VI , 1994 , 587
Copyright
Copyright © Materials Research Society 1998

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References

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