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Plasma Deposited Oxynitride Films: Structural and Electrical Characterization

Published online by Cambridge University Press:  22 February 2011

S. Scaglione ,
L. Mariucci ,
A. Mattacchini ,
A. Pecora  and
G. Fortunato
S. Scaglione
Affiliation:
ENEA-CRE Casaccia, via Anguillarese 301, 00060 Roma, Italy
L. Mariucci
Affiliation:
ENEA-CRIF, via Vecchio Macello, 80055 Portici (NA), Italy
A. Mattacchini
Affiliation:
CNR-IESS, via Cineto Romano 42, 00156 Roma, Italy
A. Pecora
Affiliation:
CNR-IESS, via Cineto Romano 42, 00156 Roma, Italy
G. Fortunato
Affiliation:
CNR-IESS, via Cineto Romano 42, 00156 Roma, Italy
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Abstract

In the present work structural and electrical properties of thin films, deposited by PECVD from He-diluted S1H4+NH3+N2O gas mixtures, have been studied. Film compositions have been analyzed by NRA, RBS and hydrogen content has been determinated by ERDA while Infrared spectroscopy has been used to evaluate the local bonding configurations. Electrical properties have been measured in metal-insulator-metal structures by I-V ramp. From the results obtained, the oxynitride films show suitable properties for application as gate insulator in amorphous silicon thin film transistor.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 345
Copyright
Copyright © Materials Research Society 1993

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References

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