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Picosecond Photon-Solid Interaction Phase Transition inSilicon

Published online by Cambridge University Press:  25 February 2011

A.M. Malvezzi ,
H. Kurz  and
N. Bloembergen
A.M. Malvezzi
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. USA
H. Kurz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. USA
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, Massachusetts 02138. USA
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Abstract

Four different regimes of photoelectric emission are observed over a videfluence range of UV-laser pulses irradiating single-crystal silicon samples.The role of the electron-hole plasma in the nonlinear photoemission isdemonstrated by temporal correlation measurements. A regime where ionthermal evaporation processes take place is observed above the criticalfluence for melting. At higher laser fluences nonlinear ion acceleration isdemonstrated by direct time-of-flight measurements.

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References

REFERENCES

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