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Physical and Electro-Optical Properties of Ion Beam Sputtered Thin Film PLZT Ceramic

Published online by Cambridge University Press:  16 February 2011

L.L. Boyer ,
A.Y. Wu  and
J.R. Mcneil
L.L. Boyer
Affiliation:
University of New Mexico, Center for High Technology Materials, Albuquerque, New Mexico 87131
A.Y. Wu
Affiliation:
University of New Mexico, Center for High Technology Materials, Albuquerque, New Mexico 87131
J.R. Mcneil
Affiliation:
University of New Mexico, Center for High Technology Materials, Albuquerque, New Mexico 87131
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Abstract

High quality PLZT thin films have been deposited using ion beam sputtering. The deposited material has perovskite crystal structure tetragonal in phase with the c-axis predominantly normal to the surface. Material deposited at temperatures below 450°C has pyrochlore structure while that deposited above 650°C displays polycrystalline characteristics. The deposition rate was approximately 0.2–0.5 Å/sec yielding film thicknesses of ∼4500 Å. The surface morphology of the deposited films is of high quality with a RMS roughness 60% that of magnetron sputtered films.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 200: Symposium Y – Ferroelectric Thin Films I , 1990 , 97
Copyright
Copyright © Materials Research Society 1990

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References

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