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Photonic Bandgap Formation by Wafer Bonding and Delamination

Published online by Cambridge University Press:  10 February 2011

Kazumi Wada ,
Thomas Chen ,
Jurgen Michel ,
Lionel C. Kimerling ,
Hiroshi Aga ,
Kiyoshi Mitani ,
Takao Abe  and
Masashi Suezawa
Kazumi Wada
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Thomas Chen
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Jurgen Michel
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Lionel C. Kimerling
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Hiroshi Aga
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, 379-0134, Japan
Kiyoshi Mitani
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, 379-0134, Japan
Takao Abe
Affiliation:
Shin-Etsu Handotai, Isobe, Annaka, 379-0134, Japan
Masashi Suezawa
Affiliation:
Institute of Materials Research, Tohoku University, Sendai, 980-77, Japan
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Abstract

A new approach for one-dimensional photonic bandgap formation is introduced. The method consists of wafer bonding and delamination, which is capable of stacking single crystalline semiconductor layers on non-crystalline insulator layers. Si and SiO2 layers with sub-wavelength periodicity are successfully stacked to form photonic crystals consisting of 3 pairs without a defect layer and of 4.5 pairs with a defect layer. The transmittance spectra are well reproduced by transfer matrix calculations. This clearly verifies the potential of the wafer bonding and delamination method.

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References

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