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Photoluminescence Study of Reproduction of Energy Levels in Cdte Films Grown by Pulsed Laser Evaporation and Epitaxy

Published online by Cambridge University Press:  01 January 1992

J. M. Wrobel ,
C. E. Moffitt  and
J. J. Dubowski
J. M. Wrobel
Affiliation:
University of Missouri -KC, Department of Physics, Kansas City, MO 64110, USA
C. E. Moffitt
Affiliation:
University of Missouri -KC, Department of Physics, Kansas City, MO 64110, USA
J. J. Dubowski
Affiliation:
National Research Council of Canada, Institute for Microstructural Sciences, Ottawa, Ont. KIA 0R6, Canada
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Abstract

A comparison between the electronic energy structure of a target material and epitaxial films obtained from this material by pulsed laser evaporation and epitaxy is presented in the paper. Targets with various impurity concentrations were used in this experiment, and the epitaxial growth took place at various substrate temperatures. Studies of photoluminescence spectra included temperature and power dependencies of spectral features associated with the impurities. Properties of donor-acceptor pair recombination served for the analysis of the differences in the impurity concentration in the layers and the source material.

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References

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