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Photoluminescence of Eu-doped GaN

Published online by Cambridge University Press:  30 June 2011

K.P. O’Donnell
K.P. O’Donnell*
Affiliation:
SUPA Dept. of Physics, University of Strathclyde, Glasgow G4 0NG, UK
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Abstract

This talk reviews work on the optical properties of Eu-doped GaN at the Semiconductor Spectroscopy laboratory of the University of Strathclyde. The principal experimental technique used has been lamp-based Photoluminescence/Excitation (PL/E) spectroscopy on samples produced mainly by high-energy ion implantation and annealing, either at low or high pressures of nitrogen, as described by Lorenz et al. [1]. These have been supplemented by samples doped in-situ either by Molecular Beam Epitaxy or Metallorganic Vapour Phase Epitaxy. Magneto-optic experiments on GaN:Eu were carried out in collaboration with the University of Bath.

Keywords

nitrideEuoptical properties

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1342: Symposium V – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2011 , mrss11-1342-v05-04
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Lorenz, K, Alves, E, Gloux, F, Ruterana, P in Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (O’Donnell, Kevin and Dierolf, Volkmar, Eds; Springer, 2010), Ch2 Google Scholar
[2] Nishikawa, Atsushi, Kawasaki, Takashi, Furukawa, Naoki, Terai, Yoshikazu, and Fujiwara, Yasufumi, Applied Physics Express 2 (2009) 071004 Google Scholar
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[5] O’Donnell, K.P. et al. ., Opt. Mater. (2010), doi:10.1016/j.optmat.2010.07.002Google Scholar
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