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Photoluminescence of Erbium Implanted in SiGe

Published online by Cambridge University Press:  10 February 2011

S. J. Chang ,
D. K. Nayak  and
Y Shiraki
S. J. Chang
Affiliation:
Department of Electrical Engineering, National Cheng Kung University, Taiwan, ROC
D. K. Nayak
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
Y Shiraki
Affiliation:
Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
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The optical properties of an Er-implanted SiGe sample have been studied Sharp and temperature-stable Er-related PL peaks were observed at around 1.5pm, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Errelated PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850°C for 20 min, the activation energy is 130 meVwhich is slightly smaller than that of the Er-doped Si.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 131
Copyright
Copyright © Materials Research Society 1996

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