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Photoluminescence And Electron Paramagnetic Resonance Of Nitrogen-Doped Zinc Selenide Epilayers

Published online by Cambridge University Press:  15 February 2011

M. Moldovan ,
S.D. Setzler ,
Z. Yu ,
T.H. Myers ,
L.E. Halliburton  and
N.C. Giles
M. Moldovan
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315
S.D. Setzler
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315
Z. Yu
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315
T.H. Myers
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315
L.E. Halliburton
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315
N.C. Giles
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506-6315
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Abstract

Photoluminescence (PL) and electron paramagnetic resonance (EPR) studies were performed on a series of ZnSe samples grown by molecular beam epitaxy. The PL has been studied as a function of excitation wavelength, power, temperature, and time. The PL data indicates that the broad emission from a heavily nitrogen-doped ZnSe film is composed of three distinct recombination processes. The EPR spectra taken at 8 K and 9.45 GHz show an isotropic signal at g = 2.0027(3) which we attribute to singly ionized selenium vacancies (Vse +). The PL and EPR data help to clarify the role of defects in the compensation of heavily nitrogen-doped ZnSe thin films.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 555
Copyright
Copyright © Materials Research Society 1997

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