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Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions

Published online by Cambridge University Press:  28 February 2011

F. Evangelisti ,
S. Modesti ,
F. Boscherini ,
P. Fiorini ,
C. Quaresima ,
M. Capozi  and
P. Perfetti
F. Evangelisti
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
S. Modesti
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
F. Boscherini
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
P. Fiorini
Affiliation:
Dipartimento di Fisica, Universita´ “La Sapienza”, 00185 Roma, Italy
C. Quaresima
Affiliation:
Istituto di Struttura della Materia, 00044 Frascati, Italy
M. Capozi
Affiliation:
PULS, Laboratori Nazionali di Frascati, 00044 Frascati, Italy
P. Perfetti
Affiliation:
Istituto di Struttura della Materia, 00044 Frascati, Italy
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Abstract

The heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in situ under ultrahigh-vacuum conditions. A step-by-step monitoring of possible band-bending changes during the interface formation enabled us to determine unambiguously the band discontinuities. The measured values of the valence band discontinuity were 0.2 ± 0.1 eV for a-Si:H/a-Ge and 0.0 ± 0.1 eV for a-Si/a-Ge, respectively. Evidence was found for the formation of abrupt interfaces without interdiffusion.

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