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Photoconductive Properties Of A GaAs-A1GaAs Quantumwell InfraredPhotodetector

Published online by Cambridge University Press:  21 February 2011

Toshiyuki Ueda ,
Koji Shinohara  and
Yoshihiro Miyamoto
Toshiyuki Ueda
Affiliation:
Fijitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243–01 Japan
Koji Shinohara
Affiliation:
Fijitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243–01 Japan
Yoshihiro Miyamoto
Affiliation:
Fijitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, 243–01 Japan
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Abstract

We investigated the conduction mechanism and performance of GaAs-A1GaAsquantum-well infrared photodetectors and proposed a conduction modelconsisting of Poole-Frenkel-like emission from wells and carrier relaxationwells. The model agrees with the measured photocurrent and dark current. Thedetector's noise current is given by a simple shot noise formula. Analysishas shown that the photocurrent and the noise current are inverselyproportional to the barrier width, while the dark current is inverselyproportional to the square of the barrier width.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 243
Copyright
Copyright © Materials Research Society 1992

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References

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