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Photocarrier Radiometric Lifetime Measurements of Intrinsic Amorphous-Crystalline Silicon Heterostructure

Published online by Cambridge University Press:  01 February 2011

Keith R Leong ,
Andreas Mandelis ,
Nazir P Kherani  and
Stefan Zukotynski
Keith R Leong
Affiliation:
Electrical and Computer Engineering, University of Toronto, 10 Kings College Road, Toronto, Ontario, M5S 3G4, Canada
Andreas Mandelis
Affiliation:
mandelis@mie.utoronto.ca, University of Toronto, Electrical and Computer Engineering, 10 Kings College Road, Toronto, Ontario, M5S 3G4, Canada
Nazir P Kherani
Affiliation:
kherani@ecf.utoronto.ca, University of Toronto, Electrical and Computer Engineering, 10 Kings College Road, Toronto, Ontario, M5S 3G4, Canada, 416 946 7372, 416 971 3020
Stefan Zukotynski
Affiliation:
zuk@ecf.utoronto.ca, University of Toronto, Electrical and Computer Engineering, 10 Kings College Road, Toronto, Ontario, M5S 3G4, Canada
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Abstract

Intrinsic hydrogenated amorphous silicon films were deposited by the DC saddle field system on crystalline silicon wafers. The substrate temperature of the amorphous film, crystalline silicon surface cleaning schemes, and the native oxide etchant were varied. The transport parameters of the amorphous-crystalline silicon heterostructures were evaluated by Photocarrier Radiometric (PCR) lifetime measurements. PCR bulk lifetime estimates were obtained using the quinhydrone in methanol solution to passivate the crystalline silicon surface. We present the effectiveness of the PCR system in evaluating different surface passivation schemes.

Keywords

amorphousSipassivation

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