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Phenyl Silica Glass for Formation of Porous Dielectric Film

Published online by Cambridge University Press:  10 February 2011

Kazuhiko Endo ,
Keisuke Shinoda  and
Toru Tatsumi
Kazuhiko Endo
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, JAPAN, endo@lbr.cl.nec.co.jp
Keisuke Shinoda
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, JAPAN, endo@lbr.cl.nec.co.jp
Toru Tatsumi
Affiliation:
Silicon Systems Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305–8501, JAPAN, endo@lbr.cl.nec.co.jp
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Abstract

Phenyl and alkyl groups were introduced into silica glass in order to prevent the formation of a Si-O network and reduce its density and to reduce the dielectric constant of the glass. In this regard, the phenyl group was more effective than the alkyl group. The measured Si-O intensity of FTIR spectrum of the glass with introduced phenyl was only 14% of thermal SiO2 film, however, the thermally stable carbon component prevented further reduction in density after 400°C annealing.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 49
Copyright
Copyright © Materials Research Society 1999

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References

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