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Phase Segregation During Laser Melting of Ni-Si and Co-Si Films

Published online by Cambridge University Press:  15 February 2011

M.A. Bosch ,
A.H. Dayem ,
T.R. Harrison  and
R.A. Lemons
M.A. Bosch
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
A.H. Dayem
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
T.R. Harrison
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
R.A. Lemons
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
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Abstract

In this study Ni-Si and Co-Si films were deposited on fused quartz substrates by coevaporating the metal and silicon. The source separation and deposition rate were chosen to produce a composition range across the substrate. These films were then melted with a scanned cw argon laser beam. This results in a dramatic phase segregation that is readily observed in a light or scanning electron microscope. For the Ni-Si sample two phases separate into irregularly shaped regions up to ≈l10μm size. Electron microprobe measurements indicate that one phase is NiSi 2 while the other is pure Si. With the Co-Si sample two phases segregate into narrow stripes that usually follow the temperature gradient produced by the scanned laser beam. The composition analysis indicates that these phases are CoSi and CoSi 2. A possible cause for this morphology is discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 431
Copyright
Copyright © Materials Research Society 1982

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References

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