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Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

Published online by Cambridge University Press:  25 February 2011

Witold P. Maszara
Witold P. Maszara*
Affiliation:
Allied Bendix Aerospace Technology Center, Columbia MD 21045
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Abstract

Silicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 143
Copyright
Copyright © Materials Research Society 1987

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References

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