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Overheating and Undercooling in Silicon During Pulsed-Laser Irradiation*

Published online by Cambridge University Press:  25 February 2011

B. C. Larson ,
J. Z. Tischler  and
D. M. Mills
B. C. Larson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Z. Tischler
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
D. M. Mills
Affiliation:
CHESS and Applied and Engineering Physics, Cornell University, Ithaca, NY 14853
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Abstract

We have used time-resolved x-ray diffraction measurements of thermalexpansion induced strain to measure overheating and undercooling in<100> and <111> oriented silicon during pulsed laser melting andregrowth. 249 nm (KrF) excimer laser pulses of 1.2 J/cm2 energydensity and 25 ns FWHM were synchronized with x-ray pulses from the CornellHigh Energy Synchrotron Source (CHESS) to carry out Bragg profilemeasurements with ±2 ns time resolution. Combined overheating andundercooling values of 120 ± 30 K and 45 ± 20 K were found for the<111> and <100> orientations, respectively, and these valueshave been used to obtain information on the limiting regrowth velocities forsilicon.

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S.Department of Energy under contract DE-AC05-840R21400 with MartinMarietta Energy Systems, Inc.

References

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