Hostname: page-component-54dcc4c588-smtgx Total loading time: 0 Render date: 2025-10-09T02:01:09.847Z Has data issue: false hasContentIssue false
  • English
  • Français

Outgassing of Photoresist During Ion Implantation

Published online by Cambridge University Press:  25 February 2011

D. Roche ,
J.F. Michaud  and
M. Bruel
D. Roche
Affiliation:
LETI-IRDI, Commissariat ā l'Energie Atomique, CENG, 85 × - 38041 GRENOBLE Cedex -, France
J.F. Michaud
Affiliation:
LETI-IRDI, Commissariat ā l'Energie Atomique, CENG, 85 × - 38041 GRENOBLE Cedex -, France
M. Bruel
Affiliation:
LETI-IRDI, Commissariat ā l'Energie Atomique, CENG, 85 × - 38041 GRENOBLE Cedex -, France
Get access

Abstract

Outgassing of HUNT HPR 204 photoresist during ion implantation has been characterized by means of quadrupole mass analysis. The influence of the various parameters (implantation eneray, beam current, ion species) has been studied in order to point out the evolutions, in terms of time or implanted dose, of the target chamber pressure and the peaks at masses 26 and 28, characteristic of the photoresist outqassing. The pressure integral in the target chamber which is easily related to the integrated outgassing flux, has been found essentially dependent on the total energy deposited in the photoresist layer and on the ion penetration depth.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] SMITH, J.C. in Ion Implantation: Equipment and Techniques (Springer, Berlin, 1983) p. 196 CrossRefGoogle Scholar
[2] OKUYAMA, Y., HASHIMOTO, T., KOGUCHI, T. J. Electrochem. Soc. 125, 8 (1978) 1293 CrossRefGoogle Scholar
[3] HANLEY, P.R. in Ion Implantation: Equipment and Techniques (Springer, Berlin, 1983) p. 2 Google Scholar
[4] RAICU, B. ibid. p. 450 Google Scholar
[5] CHENG, J.C., TRIPP, G.R. Solid St. Technol. 26, 11 (1983) 143 Google Scholar
[6] STEEPLES, K. J. Vac. Sci. Technol. B2, 1 (1984) 58 Google Scholar
[7] RYDING, G. in Ion Implantation: Equipment and Techniques (Springer, Berlin, 1983) p.274 Google Scholar
[8] MARKET, M., CURRENT, M.I. Solid St. Technol. 26, 11 (1983) 101 Google Scholar
[9] SMITH, B. Ion Implantation range data for silicon and germanium device technologies (1977)Google Scholar
[10] TENNANT, D. M. and al., J. Vac. Sci. Technol. B 3, 1 (1985) 458 Google Scholar
[11] BIASSE, B., private communicationGoogle Scholar