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Organometallic Chemical Vapor Deposition of Strontium Titanate thin Films

Published online by Cambridge University Press:  21 February 2011

W. A. Feil ,
B. W. Wessels ,
L. M. Tonge  and
T. J. Marks
W. A. Feil
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
L. M. Tonge
Affiliation:
Department of Chemistry, Northwestern University, Evanston, Illinois 60208
T. J. Marks
Affiliation:
Department of Chemistry, Northwestern University, Evanston, Illinois 60208
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Abstract

SrTiO3 thin films were deposited by low pressure organometallic chemical vapor deposition on silicon substrates using the volatile metal-organic precursors titanium isopropoxide and Sr(dipivaloylmethanate)2. Oxygen and water vapor were used as reactant gases and argon was used as a carrier gas. Growth rates ranging from 0.6–2.1 μm/hr were obtained at 650–800°C. Polycrystalline films were obtained at growth temperatures of 650–750°C, and amorphous films above 750°C. SrTiO3 films deposited on silicon substrates exhibited resistivities greater than 109 Ω-cm and dielectric constants up to 100.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 375
Copyright
Copyright © Materials Research Society 1990

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