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Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

Published online by Cambridge University Press:  10 February 2011

Roland A. Fischer  and
Wolfram Rogge
Roland A. Fischer
Affiliation:
Lehrstuhl für Anorganische Chemie II Ruhr Universität Bochum, D-44780 Bochum
Wolfram Rogge
Affiliation:
Lehrstuhl für Anorganische Chemie II Ruhr Universität Bochum, D-44780 Bochum
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Abstract

The OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 39
Copyright
Copyright © Materials Research Society 1998

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