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Optoelektronic Properties of CuGaSe2 Thin Films Studied by Time-resolved Microwave Conductivity

Published online by Cambridge University Press:  01 February 2011

A. Meeder ,
D. Fuertes Marrón ,
M. Ch. Lux-Steiner  and
M. Kunst
A. Meeder
Affiliation:
Hahn-Meitner-Institut GmbH, Glienicker Str. 100, 14109 Berlin, Germany
D. Fuertes Marrón
Affiliation:
Hahn-Meitner-Institut GmbH, Glienicker Str. 100, 14109 Berlin, Germany
M. Ch. Lux-Steiner
Affiliation:
Hahn-Meitner-Institut GmbH, Glienicker Str. 100, 14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut GmbH, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

Applying the (contactless) time-resolved microwave conductivity technique (TRMC) to CVD- and PVD-grown device grade CuGaSe2 thin films experimental data of hole mobility and lifetime are obtained. TRMC data of stoichiometric and Gallium-rich, front and back side illuminated thin films are presented. In the Gallium-rich samples an extended decay over several orders of magnitude is observed. In the stoichiometric samples the majority of excess carriers decays nearly instantaneously. Differences in charge carrier transport at the front and the back side are discussed in the framework of a two layer defect model, previously reported in such absorber layers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 763: Symposium B – Compound Semiconductor Photovoltaics , 2003 , B1.7
Copyright
Copyright © Materials Research Society 2003

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